Resumen:
Research on organic field effect transistors (OFETs) has been rapidly growing in recent years. Owing to lightweight, low cost, and low fabrication temperature, OFETs have a wide range of potential applications such as optical communication systems, advanced display technology, solid-state lighting, electrically pumped organic lasers and determination of carrier mobility. The performance of organic transistors depends largely on the quality of the insulator/organic interface, the gate insulator, the morphology of the organic thin film, and the charge injection process. This means that the interface properties between the semiconductor and the gate dielectric are of tremendous importance for the field effect mobility. This report presents the fabrication techniques such as making masks and substrates for OFETs, manufacture and storage of the active layer, the dielectric layer and electrodes thereof, as well as performing characterization measurements using equipment measurement. This work was done in the laboratories of Spectroscopy and Materials of the Grupo de Propiedades Ópticas de la Materia del Centro de Investigaciones en Óptica, GPOM-CIO.
